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mrfe6vp6300hr3 MRFE6VP6300HSR3 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets rf power transistors designed for applications operating at frequencies between 1.8 and 600 mhz. these devices are suitable for use in high vswr industrial, broadcast and aerospace applications. ? typical performance: v dd =50volts,i dq = 100 ma signal type p out (w) f (mhz) g ps (db) d (%) irl (db) pulsed (100 sec, 20% duty cycle) 300 peak 230 26.5 74.0 -- 1 6 cw 300 avg. 130 25.0 80.0 -- 1 5 ? capable of handling a load mismatch of 65:1 vswr, @ 50 vdc, 230 mhz, at all phase angles ? 300 watts cw output power ? 300 watts pulsed peak power, 20% duty cycle, 100 sec ? capable of 300 watts cw operation features ? device can be used single--ended or in a push--pull configuration ? characterized with series equival ent large--signal impedance parameters ? qualified up to a maximum of 50 v dd operation ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? rohs compliant ? ni--780--4 in tape and reel. r3 suffix = 250 units, 56 mm tape width, 13 inch reel. ? ni--780s--4 in tape and reel. r3 suffix = 250 units, 32 mm tape width, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +125 vdc gate--source voltage v gs --6.0, +10 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 75 c, 300 w pulsed, 100 sec pulse width, 20% duty cycle, 50 vdc, i dq = 100 ma, 230 mhz case temperature 87 c, 300 w cw, 50 vdc, i dq = 1100 ma, 230 mhz z jc r jc 0.05 0.19 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/devel opment tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrfe6vp6300h rev. 0, 10/2010 freescale semiconductor technical data 1.8--600 mhz, 300 w, 50 v lateral n--channel broadband rf power mosfets mrfe6vp6300hr3 MRFE6VP6300HSR3 case 465h--02, style 1 ni--780s--4 MRFE6VP6300HSR3 case 465m--01, style 1 n i -- 7 8 0 -- 4 mrfe6vp6300hr3 (top view) rf out /v ds 31 figure 1. pin connections 42 rf out /v ds rf in /v gs rf out /v gs ? freescale semiconductor, inc., 2010. a ll rights reserved.
2 rf device data freescale semiconductor mrfe6vp6300hr3 MRFE6VP6300HSR3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (minimum) machine model (per eia/jesd22--a115) b (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc drain--source breakdown voltage (v gs =0vdc,i d =50ma) v (br)dss 125 ? ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 5 adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 10 adc on characteristics gate threshold voltage (1) (v ds =10vdc,i d = 480 adc) v gs(th) 1.5 2.2 3.0 vdc gate quiescent voltage (v dd =50vdc,i d = 100 madc, measured in functional test) v gs(q) 1.7 2.5 3.2 vdc drain--source on--voltage (1) (v gs =10vdc,i d =1adc) v ds(on) ? 0.25 ? vdc dynamic characteristics (1) reverse transfer capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 0.8 ? pf output capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 76 ? pf input capacitance (v ds =50vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 188 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd =50vdc,i dq = 100 ma, p out = 300 w peak (60 w avg.), f = 230 mhz, pulsed, 100 sec pulse width, 20% duty cycle power gain g ps 25.0 26.5 28.0 db drain efficiency d 72.0 74.0 ? % input return loss irl ? -- 1 6 -- 9 db 1. each side of device measured separately.
mrfe6vp6300hr3 MRFE6VP6300HSR3 3 rf device data freescale semiconductor figure 2. mrfe6vp6300hr3(hsr3) test circuit schematic z9 0.192 x 0.170 microstrip z10* 0.366 x 0.170 microstrip z11* 2.195 x 0.170 microstrip z12* 0.614 x 0.170 microstrip z13 0.243 x 0.080 microstrip * line length includes microstrip bends z1 0.352 x 0.080 microstrip z2* 1.780 x 0.080 microstrip z3* 0.576 x 0.080 microstrip z4 0.220 x 0.220 microstrip z5 0.322 x 0.220 microstrip z6 0.168 x 0.220 microstrip z7, z8 0.282 x 0.630 microstrip z1 rf input c1 z2 z4 dut c20 rf output v bias v supply c5 c9 c11 c14 + z12 z3 c15 + z5 c6 z11 z10 z9 z8 z7 z6 r1 c4 z13 c12 c8 + l1 c7 c3 c2 c19 c18 c17 l2 c16 + c10 c13 table 5. mrfe6vp6300hr3(hsr3) test circ uit component designations and values part description part number manufacturer c1, c20 15 pf chip capacitors atc100b150jt500xt atc c2 82 pf chip capacitor atc100b820jt500xt atc c3, c17 91 pf chip capacitors atc100b910jt500xt atc c4, c10 1000 pf chip capacitors atc100b102jt50xt atc c5, c11 10k pf chip capacitors atc200b103kt50xt atc c6 0.1 f, 50 v chip capacitor cdr33bx104akws avx c7 2.2 f, 100 v chip capacitor hmk432b7225km--t taiyo yuden c8 10 f, 35 v tantalum capacitor t491d106k035at kemet c9 2.2 f, 100 v chip capacitor g2225x7r225kt3ab atc c12 0.1 f, 100 v chip capacitor c1812f104k1rac kemet c13 0.01 f, 100 v chip capacitor c1825c103k1gac kemet c14, c15, c16 220 f, 100 v electolytic capacitors mcgpr100v227m16x26--rh multicomp c18, c19 18 pf chip capacitors atc100b180jt500xt atc l1 120 nh inductor 1812sms--r12jlc coilcraft l2 17.5 nh inductor ga3095--alc coilcraft r1 1000 ? , 1/2 w chip resistor crcw20101k00fkef vishay pcb 0.030 , r =2.55 ad255a arlon
4 rf device data freescale semiconductor mrfe6vp6300hr3 MRFE6VP6300HSR3 figure 3. mrfe6vp6300hr3(hsr3) test circuit component layout c8 cut out area l1 c7 c6 c5 c1 c4 r1 c3 c2 l2 c18 c20 c19 c17 c10 c11 c12 c13 c14 c15 c16 mrfe6vp6300h/hs rev. 2 c9
mrfe6vp6300hr3 MRFE6VP6300HSR3 5 rf device data freescale semiconductor typical characteristics ? pulsed 50 1 1000 020 10 v ds , drain--source voltage (volts) figure 4. capacitance versus drain--source voltage c, capacitance (pf) 30 c iss 100 10 40 c oss measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc note: each side of device measured separately. 0.1 53 60 26 p in , input power (dbm) pulsed figure 5. pulsed output power versus input power 58 27 28 29 30 31 32 33 p out , output power (dbm) pulsed 57 54 actual ideal v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle p1db = 55.4 dbm (344 w) 56 55 59 34 p3db = 56.0 dbm (398 w) p2db = 55.8 dbm (380 w) d g ps v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle 29 20 20 90 100 26 70 50 30 p out , output power (watts) pulsed figure 6. pulsed power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) 24 22 600 23 28 40 60 80 25 27 19 26 0 23 22 p out , output power (watts) pulsed figure 7. pulsed power gain versus output power g ps , power gain (db) 50 21 350 400 v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle 20 100 200 250 300 v dd =30v 50 v 24 25 28 27 29 150 35 v 40 v 45 v 20 90 0 p out , output power (watts) pulsed figure 8. pulsed drain efficiency versus output power 70 50 100 150 200 250 300 350 60 30 50 40 80 400 figure 9. pulsed power gain and drain efficiency versus output power p out , output power (watts) pulsed g ps , power gain (db) 21 10 24 23 100 600 d 25 _ c t c =--30 _ c 85 _ c g ps v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle 40 60 50 10 30 20 d , drain efficiency (%) -- 3 0 _ c 25 _ c 85 _ c v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle v dd =30v 50 v 35 v 40 v 45 v d, drain efficiency (%) 22 27 26 25 29 28 70 80 90 c rss
6 rf device data freescale semiconductor mrfe6vp6300hr3 MRFE6VP6300HSR3 typical characteristics ? two--tone figure 10. intermodulation distortion products versus output power -- 8 0 -- 1 0 10 7th order p out , output power (watts) pep v dd =50vdc,i dq = 1600 ma, f1 = 230 mhz f2 = 230.1 mhz, two--tone measurements 3rd order -- 4 0 -- 5 0 -- 6 0 100 400 imd, intermodulatio n distortion (dbc) -- 7 0 5th order figure 11. intermodulation distortion products versus two--tone spacing 10 -- 1 0 0.1 7th order two--tone spacing (mhz) 5th order 3rd order -- 3 0 -- 4 0 -- 5 0 140 imd, intermodulatio n distortion (dbc) figure 12. two--tone power gain versus output power 25 30 5 i dq = 1600 ma p out , output power (watts) pep 26 500 g ps , power gain (db) 28 v dd = 50 vdc, f1 = 230 mhz, f2 = 230.1 mhz two--tone measurements figure 13. third order intermodulation distortion versus output power p out , output power (watts) pep -- 2 5 -- 3 0 -- 4 0 -- 4 5 -- 5 0 intermodulation d istortion (dbc) imd, third order -- 1 5 v dd = 50 vdc, f1 = 230 mhz, f2 = 230.1 mhz two--tone measurements 400 10 -- 7 0 -- 2 0 v dd =50vdc,p out = 250 w (pep), i dq = 1600 ma two--tone measurements -- 3 5 -- 3 0 -- 6 0 29 27 1400 ma -- 2 0 10 100 650 ma 1100 ma 900 ma -- 2 0 100 i dq = 650 ma 1400 ma 1100 ma 900 ma 1600 ma
mrfe6vp6300hr3 MRFE6VP6300HSR3 7 rf device data freescale semiconductor typical characteristics 250 10 9 90 t j , junction temperature ( c) figure 14. mttf versus junction temperature ? cw this above graph displays calculated mttf in hours when the device is operated at v dd =50vdc,p out = 300 w avg., and d = 80%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 4 110 130 150 170 190 mttf (hours) 210 230 10 8 10 5
8 rf device data freescale semiconductor mrfe6vp6300hr3 MRFE6VP6300HSR3 f = 230 mhz f = 230 mhz z load z source z o =5 ? v dd =50vdc,i dq = 100 ma, p out = 300 w peak f mhz z source ? z load ? 230 0.65 + j2.79 1.64 + j2.85 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. series equivalent source and load impedance z source z load input matching network device under test output matching network
mrfe6vp6300hr3 MRFE6VP6300HSR3 9 rf device data freescale semiconductor package dimensions
10 rf device data freescale semiconductor mrfe6vp6300hr3 MRFE6VP6300HSR3
mrfe6vp6300hr3 MRFE6VP6300HSR3 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor mrfe6vp6300hr3 MRFE6VP6300HSR3
mrfe6vp6300hr3 MRFE6VP6300HSR3 13 rf device data freescale semiconductor product documentation and software refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 oct. 2010 ? initial release of data sheet
14 rf device data freescale semiconductor mrfe6vp6300hr3 MRFE6VP6300HSR3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrfe6vp6300h rev. 0, 10/2010

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